DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, KK | - |
dc.contributor.author | Park, CG | - |
dc.contributor.author | Kim, DK | - |
dc.date.accessioned | 2017-07-19T12:34:22Z | - |
dc.date.available | 2017-07-19T12:34:22Z | - |
dc.date.created | 2016-02-22 | - |
dc.date.issued | 2016-01 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/36051 | - |
dc.description.abstract | The electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition were investigated for through-silicon via (TSV) and metal-insulator-metal applications at temperatures below 300 degrees C. ZrO2 films were able to be conformally deposited on the scallops of 50-mu m-diameter, 100-mu m-deep TSV holes. The mean breakdown field of 30-nm-thick ZrO2 films on 30-nm-thick Ta(N) increased about 41% (from 2.7 to 3.8MV/cm) upon H-2 plasma treatment. With the plasma treatment, the breakdown field of the film increased and the temperature coefficient of capacitance decreased significantly, probably as a result of the decreased carbon concentration in the film. (C) 2016 The Japan Society of Applied Physics | - |
dc.language | English | - |
dc.publisher | IOP publishing | - |
dc.relation.isPartOf | Japanese Journal of Applied Physics | - |
dc.title | Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal–insulator–metal applications | - |
dc.type | Article | - |
dc.identifier.doi | 10.7567/JJAP.55.016502 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Japanese Journal of Applied Physics, v.55, no.1 | - |
dc.identifier.wosid | 000369001600035 | - |
dc.date.tcdate | 2018-03-23 | - |
dc.citation.number | 1 | - |
dc.citation.title | Japanese Journal of Applied Physics | - |
dc.citation.volume | 55 | - |
dc.contributor.affiliatedAuthor | Park, CG | - |
dc.identifier.scopusid | 2-s2.0-84952685460 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | THIN-FILM | - |
dc.subject.keywordPlus | SURFACE-ROUGHNESS | - |
dc.subject.keywordPlus | HYDROGEN PLASMA | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | PASSIVATION | - |
dc.subject.keywordPlus | DIELECTRICS | - |
dc.subject.keywordPlus | CAPACITANCE | - |
dc.subject.keywordPlus | VOLTAGE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | ALD | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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