DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, SJ | - |
dc.contributor.author | Han, JC | - |
dc.contributor.author | Kim, JH | - |
dc.contributor.author | Jo, SJ | - |
dc.contributor.author | Song, HJ | - |
dc.contributor.author | Park, SW | - |
dc.contributor.author | Song, JI | - |
dc.date.accessioned | 2017-07-19T13:41:02Z | - |
dc.date.available | 2017-07-19T13:41:02Z | - |
dc.date.created | 2016-02-16 | - |
dc.date.issued | 2002-01 | - |
dc.identifier.issn | 0951-3248 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/37398 | - |
dc.description.abstract | We first report the characteristics of depletion-mode InP MOSFETs implemented by a liquid phase oxidation of In0.53Ga0.47As. The epitaxial layer structure of the InP MOSFET was grown by a chemical beam epitaxy (CBE). The n(+)-doped In0.53Ga0.47As layer, which was used for an ohmic contact and a gate oxide after oxidation, was oxidized using a gal lium-ion-contained nitric acid solution at 70 degreesC using the ohmic metal as a mask followed by an Oxygen plasma treatment. The current-voltage characteristics of MOSFETs having a 1.5x50 mum(2) gate showed a complete pinch-off characteristics with a relatively low pinch-off voltage (similar to -2.0V). The f(T) and f(max) of the transistor measured at V-gs of 0 V and V (ds) of 5.0 V were 10.5 and 70 GHz, respectively. | - |
dc.language | English | - |
dc.publisher | Institute of Physics | - |
dc.relation.isPartOf | COMPOUND SEMICONDUCTORS 2001 | - |
dc.title | A Depletion-mode InP MOSFET with a Liquid Phase Oxidized InGaAs Gate | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | COMPOUND SEMICONDUCTORS 2001, no.170, pp.125 - 129 | - |
dc.identifier.wosid | 000179011200020 | - |
dc.date.tcdate | 2018-03-23 | - |
dc.citation.endPage | 129 | - |
dc.citation.number | 170 | - |
dc.citation.startPage | 125 | - |
dc.citation.title | COMPOUND SEMICONDUCTORS 2001 | - |
dc.contributor.affiliatedAuthor | Song, HJ | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordPlus | POWER-DENSITY | - |
dc.subject.keywordPlus | MISFETS | - |
dc.subject.keywordPlus | GHZ | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Characterization & Testing | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
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