DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kyunghun Kim | - |
dc.contributor.author | Mi Jang | - |
dc.contributor.author | Minjung Lee | - |
dc.contributor.author | Tae Kyu An | - |
dc.contributor.author | John E. Anthony | - |
dc.contributor.author | Se Hyun Kim | - |
dc.contributor.author | Hoichang Yang | - |
dc.contributor.author | Park, CE | - |
dc.date.accessioned | 2017-07-19T13:50:07Z | - |
dc.date.available | 2017-07-19T13:50:07Z | - |
dc.date.created | 2017-02-27 | - |
dc.date.issued | 2016-08-07 | - |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/37694 | - |
dc.description.abstract | A unified patterning and annealing approach was successfully demonstrated for 5,11-bis(triethylsilylethynyl)-anthradithiophene (TES-ADT) films spun-cast on polymer-treated SiO2 dielectrics. First, rubbery polydimethylsiloxane (mu-PDMS) stamps with microscale periodic grooves were swollen in 1,2-dichloroethane and then softly placed onto amorphous-like TES-ADT films. In this case, the film sides physically in contact with the wet stamps were quickly absorbed into the PDMS matrix while the non-contact area formed highly ordered phases by the solvent-annealing effect. The resulting patterns of TES-ADT contained discernable crystallites, where the grain sizes drastically decreased and their shapes transformed from spherulites to optically featureless ones with a decreasing line width from 100 to 2.5 mu m. Unlike ordinary systems containing spherulitic domains, the 2.5 mu m line-confined TES-ADT patterns contained layer-stacked crystallites but an optically invisible grain boundary, yielding an unexpectedly high field-effect mobility of 2.60 cm(2) V-1 s(-1) in organic field-effect transistors (OFETs), with narrow deviations less than 8% (averaged from 42 devices). The results suggest that the well pi-overlapped grains and their smooth connections are key factors to achieve high performance multi-array OFET applications. | - |
dc.language | English | - |
dc.publisher | Royal Society of Chemistry | - |
dc.relation.isPartOf | Journal of Materials Chemistry C | - |
dc.title | Unified film patterning and annealing of an organic semiconductor with micro-grooved wet stamps | - |
dc.type | Article | - |
dc.identifier.doi | 10.1039/C6TC01723A | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Journal of Materials Chemistry C, v.4, no.29, pp.6996 - 7003 | - |
dc.identifier.wosid | 000381329700008 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 7003 | - |
dc.citation.number | 29 | - |
dc.citation.startPage | 6996 | - |
dc.citation.title | Journal of Materials Chemistry C | - |
dc.citation.volume | 4 | - |
dc.contributor.affiliatedAuthor | Park, CE | - |
dc.identifier.scopusid | 2-s2.0-84979590974 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 6 | - |
dc.description.scptc | 5 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | TRIETHYLSILYLETHYNYL ANTHRADITHIOPHENE | - |
dc.subject.keywordPlus | CONTACT | - |
dc.subject.keywordPlus | CRYSTALLIZATION | - |
dc.subject.keywordPlus | LITHOGRAPHY | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | CRYSTALS | - |
dc.subject.keywordPlus | POLYMER | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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