Physical DC and Thermal Noise Models of 18 nm Double-Gate Junctionless pMOSFETs for Low Noise RF Applications
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SCOPUS
- Title
- Physical DC and Thermal Noise Models of 18 nm Double-Gate Junctionless pMOSFETs for Low Noise RF Applications
- Authors
- Jeong, EY; Deen, MJ; Chen, CH; Baek, RH; Lee, JS; Jeong, YH
- Date Issued
- 2015-04
- Publisher
- The Japan Society of Applied Physics
- Abstract
- In this paper, we describe an improved DC model for double-gate junctionless p-type MOSFET (pMOSFETs) that includes field-dependent mobility and doping-dependent diffusivity, using a modified Einstein's relation for heavily doped semiconductors. The suggested new model was calibrated with experimental data. We also demonstrated a new noise model valid for all bias regions, as well as the calculated results for channel thermal noise and induced gate noise, and their correlation as a function of biasing conditions. This results provide physical insights into the noise properties of 18nm double- gate junctionless pMOSFETs. (C) 2015 The Japan Society of Applied Physics
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/37760
- DOI
- 10.7567/JJAP.54.04DC08
- ISSN
- 0021-4922
- Article Type
- Article
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 54, no. 4, page. 4DC08-1 - 4DC08-6, 2015-04
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