DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jang, HW | - |
dc.contributor.author | Kim, JK | - |
dc.contributor.author | Kim, SY | - |
dc.contributor.author | Yu, HK | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2017-07-19T14:05:07Z | - |
dc.date.available | 2017-07-19T14:05:07Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2004-09 | - |
dc.identifier.issn | 0031-8965 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/38089 | - |
dc.description.abstract | We report novel metallization schemes of transparent p-ohmic contacts for conventional LEDs and reflective p-ohmic contacts for flip-chip and vertical-structure LEDs. Thermally stable and low-resistivity Ru/Ni/ITO ohmic contacts on p-type GaN resulted in the low contact resistivity of 2 x 10(-4) Omega cm(2) and the high transmittance of 92% at 470 nm wavelength. The light output power of the LED with the Ru/Ni/ITO p-contact was increased by 50% compared to the LED of a Ni/Au transparent p-contact. Using a newly developed Ni/Ag/Ru/Ni/Au reflective p-ohmic contact, the low contact resistivity of 5 x 10(-5) Omega cm(2) could be achieved. The light reflectance of the contact was as high as 90% at 470 mn wavelength. | - |
dc.language | English | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.relation.isPartOf | PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | - |
dc.subject | P-TYPE GAN | - |
dc.subject | LIGHT-EMITTING-DIODES | - |
dc.subject | LOW-RESISTANCE | - |
dc.subject | NI/AU | - |
dc.title | Ohmic contacts for high power LEDs | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/pssa.200405111 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, v.201, no.12, pp.2831 - 2836 | - |
dc.identifier.wosid | 000224218000049 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 2836 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 2831 | - |
dc.citation.title | PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | - |
dc.citation.volume | 201 | - |
dc.contributor.affiliatedAuthor | Kim, JK | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-7044249509 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 4 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordPlus | P-TYPE GAN | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | LOW-RESISTANCE | - |
dc.subject.keywordPlus | NI/AU | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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