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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | K. H. Choi | ko |
| dc.contributor.author | S. K. Jo | ko |
| dc.contributor.author | Y. H. Jeong | ko |
| dc.date.accessioned | 2017-08-17T14:50:24Z | - |
| dc.date.available | 2017-08-17T14:50:24Z | - |
| dc.date.created | 2009-08-17 | - |
| dc.date.issued | 1994-01 | - |
| dc.identifier.citation | JOURNAL OF KITE, v.31, no.9, pp.80 - 84 | - |
| dc.identifier.issn | 1226-1262 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/38527 | - |
| dc.language | Korean | - |
| dc.publisher | . | - |
| dc.title | CHARACTERISTICS OF SULFIDE TREATED GAAS MISFETS WITH PHOTO-CVD GROWN P3N5 GATE INSULATOR | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.contributor.localauthor | Y. H. Jeong | - |
| dc.contributor.nonIdAuthor | K. H. Choi | - |
| dc.contributor.nonIdAuthor | S. K. Jo | - |
| dc.citation.endPage | 84 | - |
| dc.citation.number | 9 | - |
| dc.citation.startPage | 80 | - |
| dc.citation.title | JOURNAL OF KITE | - |
| dc.citation.volume | 31 | - |
| dc.description.journalClass | 2 | - |
| dc.type.docType | Article | - |
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- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg