Ordering mechanism and quantum anomalous Hall effect of magnetically doped topological insulators
SCIE
SCOPUS
- Title
- Ordering mechanism and quantum anomalous Hall effect of magnetically doped topological insulators
- Authors
- JHI, SEUNG HOON; Kim, Jeongwoo; MacDonald, A. H; Wu, Ruqian
- Date Issued
- 2017-10
- Publisher
- AMER PHYSICAL SOC
- Abstract
- We investigate magnetic ordering and the quantum anomalous Hall effect (QAHE) in Cr-doped topological insulators using systematic first-principles calculations, explaining the mechanism responsible for ferromagnetic order and the reason why Sb2Te3 is a better QAHE host than Bi2Se3 or Bi2Te3. We conclude that these magnetic topological insulators have relatively long-range exchange interactions within quintuple layers and weak interactions between quintuple layers. Our analyses for the spin splitting of the topological surface states suggest that the temperature at which the QAHE occurs in these materials can be enhanced significantly by Mo-Cr co-doping.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/38983
- DOI
- 10.1103/PhysRevB.96.140410
- ISSN
- 2469-9950
- Article Type
- Article
- Citation
- PHYSICAL REVIEW B, vol. 96, no. 14, 2017-10
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- There are no files associated with this item.
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