DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Joon Young | - |
dc.contributor.author | Lee, Gil-Ho | - |
dc.contributor.author | Jo, Janghyun | - |
dc.contributor.author | Cheng, Austin K. | - |
dc.contributor.author | Yoon, Hosang | - |
dc.contributor.author | Watanabe, Kenji | - |
dc.contributor.author | Taniguchi, Takashi | - |
dc.contributor.author | Kim, Miyoung | - |
dc.contributor.author | Kim, Philip | - |
dc.contributor.author | Yi, Gyu-Chul | - |
dc.date.accessioned | 2018-01-04T11:12:05Z | - |
dc.date.available | 2018-01-04T11:12:05Z | - |
dc.date.created | 2017-08-17 | - |
dc.date.issued | 2016-09 | - |
dc.identifier.issn | 2053-1583 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/39242 | - |
dc.description.abstract | We report the molecular beam epitaxial growth and characterization of high quality topological insulator Bi2Se3 thin films on hexagonal boron nitride (h-BN). A two-step growth was developed, enhancing both the surface coverage and crystallinity of the films on h-BN. High-resolution transmission electron microscopy study showed an atomically abrupt and epitaxial interface formation between the h-BN substrate and Bi2Se3. We performed gate tuned magnetotransport characterizations of the device fabricated on the thin film and confirmed a high mobility surface state at the Bi2Se3/h-BN interface. The Berry phase obtained from Shubnikov-de Haas oscillations suggested this interfacial electronic state is a topologically protected Dirac state. | - |
dc.language | English | - |
dc.publisher | IOP Publishing | - |
dc.relation.isPartOf | 2D Materials | - |
dc.title | Molecular beam epitaxial growth and electronic transport properties of high quality topological insulator Bi2Se3 thin films on hexagonal boron nitride | - |
dc.type | Article | - |
dc.identifier.doi | 10.1088/2053-1583/3/3/035029 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | 2D Materials, v.3, no.3, pp.35029 | - |
dc.identifier.wosid | 000385420600008 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 35029 | - |
dc.citation.title | 2D Materials | - |
dc.citation.volume | 3 | - |
dc.contributor.affiliatedAuthor | Lee, Gil-Ho | - |
dc.identifier.scopusid | 2-s2.0-84992410855 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 3 | - |
dc.description.scptc | 3 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | CRYSTAL-STRUCTURE | - |
dc.subject.keywordPlus | CONDUCTION | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | GAP | - |
dc.subject.keywordAuthor | topological insulator | - |
dc.subject.keywordAuthor | hexagonal boron nitride | - |
dc.subject.keywordAuthor | molecular beam epitaxy | - |
dc.subject.keywordAuthor | bismuth selenide | - |
dc.subject.keywordAuthor | magnetotransport | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
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