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dc.contributor.authorHyung Seok Kim-
dc.contributor.authorJu Hyung Suh-
dc.contributor.authorChan Gyung Park-
dc.contributor.authorSang Jun Lee-
dc.contributor.authorSam Kyu Noh-
dc.date.accessioned2018-01-08T04:52:16Z-
dc.date.available2018-01-08T04:52:16Z-
dc.date.created2009-03-26-
dc.date.issued2006-01-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/39546-
dc.languageEnglish-
dc.publisher.-
dc.relation.isPartOf2006 IEEE Nanotechnology Materials and Devices Conference, NMDC-
dc.titleMISFITSTRAIN AND GROWTH CHARACTERISTICS OF INAS/GAAS QUANTUM DOTS GROWN BY MOLECULAR BEAM EPITAXY-
dc.typeArticle-
dc.identifier.doi10.1109/NMDC.2006.43-
dc.type.rimsART-
dc.identifier.bibliographicCitation2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, v.1, pp.198 - 199-
dc.citation.endPage199-
dc.citation.startPage198-
dc.citation.title2006 IEEE Nanotechnology Materials and Devices Conference, NMDC-
dc.citation.volume1-
dc.contributor.affiliatedAuthorChan Gyung Park-
dc.identifier.scopusid2-s2.0-50249148330-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.journalRegisteredClassscopus-

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박찬경PARK, CHAN GYUNG
Dept of Materials Science & Enginrg
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