Short Ballistic Josephson Coupling in Planar Graphene Junctions with Inhomogeneous Carrier Doping

Abstract

We report on short ballistic (SB) Josephson coupling in junctions embedded in a planar heterostructure of graphene. Ballistic Josephson coupling is confirmed by the Fabry-Perot-type interference of the junction critical current Ic. The product of Ic and the normal-state junction resistance RN, normalized by the zero-temperature gap energy Δ0 of the superconducting electrodes, turns out to be exceptionally large close to 2, an indication of strong Josephson coupling in the SB junction limit. However, Ic shows a temperature dependence that is inconsistent with the conventional short-junction-like behavior based on the standard Kulik-Omel'yanchuk prediction. We argue that this feature stems from the effects of inhomogeneous carrier doping in graphene near the superconducting contacts, although the junction is in fact in the short-junction limit. © 2018 American Physical Society.