Investigation of Hot-Carrier Reliability in Junctionless Polysilicon Thin-Film Transistors

Abstract

We investigate hot-carrier (HC) reliability and 1/f noise characteristics in junctionless thin-film transistors (J-TFTs). The in-situ n +-doped channel polysilicon was deposited using low-temperature chemical vapor deposition (LP-CVD). Under the HC stressing, the junctionless devices show less degradation of the electrical characteristics than those of conventional inversion-mode TFTs (IM-TFTs). In order to further analyze the reliability behaviors, the low-frequency noise spectral density (Sid ) characteristics of the J-TFTs were measured and compared with the IM-TFTs. Under the HC stressing, the J-TFTs showed two order of magnitude lower noise levels due to bulk conduction and lower lateral electric field near drain region compared to the IM-TFTs.