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dc.contributor.authorBAEK, ROCK HYUN-
dc.contributor.author이정수-
dc.contributor.authorJIWON, KIM-
dc.contributor.authorOH, HYEON GWAN-
dc.date.accessioned2018-05-10T09:14:44Z-
dc.date.available2018-05-10T09:14:44Z-
dc.date.created2018-02-11-
dc.date.issued2017-09-21-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/41955-
dc.languageEnglish-
dc.publisherJapanese Society of Applied Physics-
dc.relation.isPartOfInternational Conference on Solid State Devices and Materials (SSDM 2017)-
dc.relation.isPartOfExtended Abstracts of the 2017 International Conference on Solid State Devices and Materials-
dc.titleVth variation of string SONOS NAND Flash depending on single grain boundary and stored electron charges in an adjacent cell-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationInternational Conference on Solid State Devices and Materials (SSDM 2017), pp.793 - 794-
dc.citation.conferenceDate2017-09-19-
dc.citation.conferencePlaceJA-
dc.citation.conferencePlaceSendai-
dc.citation.endPage794-
dc.citation.startPage793-
dc.citation.titleInternational Conference on Solid State Devices and Materials (SSDM 2017)-
dc.contributor.affiliatedAuthorBAEK, ROCK HYUN-
dc.contributor.affiliatedAuthor이정수-
dc.contributor.affiliatedAuthorJIWON, KIM-
dc.contributor.affiliatedAuthorOH, HYEON GWAN-
dc.description.journalClass1-
dc.description.journalClass1-

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이정수LEE, JEONG SOO
Dept of Electrical Enginrg
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