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dc.contributor.authorF. Degave-
dc.contributor.authorP. Ruterana-
dc.contributor.authorG. Nouet-
dc.contributor.authorJ.H. Je-
dc.contributor.authorC.C. Kim-
dc.date.accessioned2018-05-11T09:03:42Z-
dc.date.available2018-05-11T09:03:42Z-
dc.date.created2009-03-26-
dc.date.issued2002-01-
dc.identifier.issn1862-6351-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/43442-
dc.languageEnglish-
dc.publisher.-
dc.relation.isPartOfPHYSICA STATUS SOLIDI-
dc.titleMETALORGANIC CHEMICAL VAPOR DEPOSITION GROWTH OF A GAN EPILAYER ON AN ANNEALED GAN BUFFER LAYER-
dc.typeArticle-
dc.identifier.doi10.1002/pssc.200390110-
dc.type.rimsART-
dc.identifier.bibliographicCitationPHYSICA STATUS SOLIDI, v.0, no.1, pp.546 - 549-
dc.citation.endPage549-
dc.citation.number1-
dc.citation.startPage546-
dc.citation.titlePHYSICA STATUS SOLIDI-
dc.citation.volume0-
dc.contributor.affiliatedAuthorJ.H. Je-
dc.identifier.scopusid2-s2.0-84875084867-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.journalRegisteredClassscopus-

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제정호JE, JUNG HO
Dept of Materials Science & Enginrg
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