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dc.contributor.author김종규-
dc.contributor.authorQi Dai-
dc.contributor.authorMartin F. Schubert-
dc.contributor.authorMin Ho Kim-
dc.contributor.authorE. Fred Schubert-
dc.contributor.authorDaniel D. Koleske-
dc.contributor.authorMary H. Crawford-
dc.contributor.authorStephen r. Lee-
dc.contributor.authorArthur J. Fischer-
dc.contributor.authorGerald Thaler-
dc.contributor.authorMichael A. Banas-
dc.date.accessioned2018-05-23T15:29:06Z-
dc.date.available2018-05-23T15:29:06Z-
dc.date.created2010-05-31-
dc.date.issued2009-05-31-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/46700-
dc.publisherThe Conference on Lasers and Electro-Optics (CLEO) 2009-
dc.relation.isPartOfThe Conference on Lasers and Electro-Optics (CLEO) 2009-
dc.titleInternal quantum efficiency and non-radiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationThe Conference on Lasers and Electro-Optics (CLEO) 2009-
dc.citation.conferenceDate2009-05-31-
dc.citation.conferencePlaceUS-
dc.citation.titleThe Conference on Lasers and Electro-Optics (CLEO) 2009-
dc.contributor.affiliatedAuthor김종규-
dc.description.journalClass1-
dc.description.journalClass1-

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김종규KIM, JONG KYU
Dept of Materials Science & Enginrg
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