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Very high quality AlN grown on (0001) sapphire by using metal-organic vapor-phase epitaxy
- Title
- Very high quality AlN grown on (0001) sapphire by using metal-organic vapor-phase epitaxy
- Authors
- 김종규; K. Chen; Y. A. Xi; F. Mont; E. F. Schubert; W. Wetzel; W. Liu; X. Li; J. A. Smart; L. J. Schowalter
- Date Issued
- 2006-08-02
- Publisher
- IEEE Lester Eastman Conference on High Performance Devices
- Article Type
- Conference
- Citation
- IEEE Lester Eastman Conference on High Performance Devices, 2006-08-02
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Related Researcher
- 김종규KIM, JONG KYU
- Dept of Materials Science & Enginrg