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dc.contributor.author김종규-
dc.contributor.authorC. C. Kim-
dc.contributor.authorJ. -L. Lee-
dc.contributor.authorM. S. Yi-
dc.contributor.authorD. Y. Noh-
dc.contributor.authorY. Hwu-
dc.contributor.authorP. Ruterana-
dc.contributor.authorJ. H. Je-
dc.date.accessioned2018-05-23T15:33:36Z-
dc.date.available2018-05-23T15:33:36Z-
dc.date.created2010-06-02-
dc.date.issued2004-03-15-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/46792-
dc.publisherThe 5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004)-
dc.relation.isPartOfThe 5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004)-
dc.titleMetal/GaN Interfacial Nanostructures and their Electrical Properties-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationThe 5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004)-
dc.citation.conferenceDate2004-03-15-
dc.citation.conferencePlaceKO-
dc.citation.titleThe 5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004)-
dc.contributor.affiliatedAuthor김종규-
dc.description.journalClass2-
dc.description.journalClass2-

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김종규KIM, JONG KYU
Dept of Materials Science & Enginrg
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