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dc.contributor.author김종규-
dc.contributor.authorJ. M. Baik-
dc.contributor.authorK. J. Choi-
dc.contributor.authorH. W. Jang-
dc.contributor.authorS. H. Oh-
dc.contributor.authorCh. G. Park-
dc.contributor.authorY. Shon-
dc.contributor.authorT. W. Kang-
dc.contributor.authorJ. –L. Lee-
dc.date.accessioned2018-05-23T15:33:48Z-
dc.date.available2018-05-23T15:33:48Z-
dc.date.created2010-06-02-
dc.date.issued2002-07-22-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/46796-
dc.publisherInternational Workshop on Nitride Semiconductors (IWN 2002)-
dc.relation.isPartOfInternational Workshop on Nitride Semiconductors (IWN 2002)-
dc.relation.isPartOfIWN 2002 PHYSICA STATUS SOLIDI - CONFERENCES-
dc.titleMicrostructural and electrical investigation of the p-type GAN implanted with Mn+ ions-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationInternational Workshop on Nitride Semiconductors (IWN 2002), pp.331-
dc.citation.conferenceDate2002-07-22-
dc.citation.conferencePlaceGE-
dc.citation.startPage331-
dc.citation.titleInternational Workshop on Nitride Semiconductors (IWN 2002)-
dc.contributor.affiliatedAuthor김종규-
dc.description.journalClass1-
dc.description.journalClass1-

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김종규KIM, JONG KYU
Dept of Materials Science & Enginrg
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