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dc.contributor.author김오현-
dc.date.accessioned2018-05-24T11:38:50Z-
dc.date.available2018-05-24T11:38:50Z-
dc.date.created2017-02-28-
dc.date.issued2016-05-30-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/49719-
dc.publisherECS-
dc.relation.isPartOfECS meeting-
dc.titleMechanism of Hump Phenomenon in the I-V Characteristics of Amorphous in-Ga-Zn-O Thin Film Transistors Under Positive Bias and Illumination Stress-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationECS meeting-
dc.citation.conferenceDate2016-05-29-
dc.citation.conferencePlaceUS-
dc.citation.titleECS meeting-
dc.contributor.affiliatedAuthor김오현-
dc.description.journalClass1-
dc.description.journalClass1-

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김오현KIM, OHYUN
Dept of Electrical Enginrg
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