DC Field | Value | Language |
---|---|---|
dc.contributor.author | SEOKJAE, LIM | - |
dc.contributor.author | Woo, J. | - |
dc.contributor.author | Hwang, H. | - |
dc.date.accessioned | 2018-06-15T05:35:37Z | - |
dc.date.available | 2018-06-15T05:35:37Z | - |
dc.date.created | 2017-12-21 | - |
dc.date.issued | 2017-08 | - |
dc.identifier.issn | 2162-8769 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/50635 | - |
dc.description.abstract | Bipolar-threshold switching was demonstrated using volatile-atomic switches (VAS) for cross-point selector applications. The VAS (Cu/Cu2S/W) exhibits asymmetric current?voltage (I?V) characteristics. An abrupt conductance change occurs by the formation of a Cu filament when a positive voltage is applied to the Cu electrode. Meanwhile, nonlinear I?V characteristics are observed because of the high concentration of vacancy of Cu under a negative voltage. We thus introduce the complementary-VAS configuration for the self-compliance characteristics at both polarities. Furthermore, the increased the switching voltage at a fast sweeping rate allows the VAS to show a strong immunity to electrical disturbance. ? 2017 The Electrochemical Society. All rights reserved. | - |
dc.language | English | - |
dc.publisher | Electrochemical Society Inc. | - |
dc.relation.isPartOf | ECS Journal of Solid State Science and Technology | - |
dc.subject | Asymmetric currents | - |
dc.subject | Atomic switches | - |
dc.subject | Electrical disturbances | - |
dc.subject | Negative voltage | - |
dc.subject | Positive voltage | - |
dc.subject | Strong immunity | - |
dc.subject | Switching voltages | - |
dc.subject | Threshold switching | - |
dc.title | Excellent Threshold Selector Characteristics of Cu2S-based Atomic Switch Device | - |
dc.type | Article | - |
dc.identifier.doi | 10.1149/2.0081709jss | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ECS Journal of Solid State Science and Technology, v.6, no.9, pp.P586 - P588 | - |
dc.identifier.wosid | 000418363500014 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | P588 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | P586 | - |
dc.citation.title | ECS Journal of Solid State Science and Technology | - |
dc.citation.volume | 6 | - |
dc.contributor.affiliatedAuthor | SEOKJAE, LIM | - |
dc.contributor.affiliatedAuthor | Hwang, H. | - |
dc.identifier.scopusid | 2-s2.0-85033797580 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 2 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | MEMORIES | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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