Comparative Study of Antimony Doping Effects on the Performance of Solution-Processed ZIO and ZTO Field-Effect Transistors
SCIE
SCOPUS
- Title
- Comparative Study of Antimony Doping Effects on the Performance of Solution-Processed ZIO and ZTO Field-Effect Transistors
- Authors
- Baek, J.H.; Seol, H.; Cho, K.; Yang, H.; Jeong, J.K.
- Date Issued
- 2017-03
- Publisher
- American Chemical Society
- Abstract
- ZnO-based oxide films are emerging as high-performance semiconductors for field-effect transistors (FETs) in optoelectronics. Carrier mobility and stability in these FETs are improved by introducing indium (In) and gallium (Ga) cations, respectively. However, the strong trade-off between the mobility and stability, which come from In or Ga incorporation, still limits the widespread use of metal oxide FETs in ultrahigh pixel density and device area-independent flat panel applications. We demonstrated that the incorporation of antimony (Sb) cations in amorphous zinc indium oxide (ZIO) simultaneously enhanced the field-effect mobility (��FET) and electrical stability of the resulting Sb-doped ZIO FETs. The rationale for the unexpected synergic effect was related to the unique electron configuration of Sb5+ ([Kr]4d105s05p0). However, the benefit of Sb doping was not observed in the zinc tin oxide (ZTO) system. All the Sb-doped ZTO FETs suffered from a reduction in ��FET and a deterioration of gate bias stress stability with an increase in Sb loading. This can be attributed to the formation of heterogeneous defects due to Sb-induced phase separation and the creation of Sb3+ induced acceptor-like trap states. ? 2017 American Chemical Society.
- Keywords
- Economic and social effects; Electric field effects; Indium; Metals; Oxide films; Phase separation; Positive ions; Semiconductor doping; Stability; Stress analysis; Tin; Tin oxides; Transistors; Zinc; Antimony doping; Bias stability; Solution process; Zinc indium oxide; Zinc tin oxide; Field effect transistors
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/50841
- DOI
- 10.1021/acsami.7b01090
- ISSN
- 1944-8244
- Article Type
- Article
- Citation
- ACS Applied Materials and Interfaces, vol. 9, no. 12, page. 10904 - 10913, 2017-03
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.