Interface-Engineered Charge-Transport Properties in Benzenedithiol Molecular Electronic Junctions via Chemically p-Doped Graphene Electrodes
SCIE
SCOPUS
- Title
- Interface-Engineered Charge-Transport Properties in Benzenedithiol Molecular Electronic Junctions via Chemically p-Doped Graphene Electrodes
- Authors
- Jang, Yeonsik; Kwon, Sung-Joo; Shin, Jaeho; Jeong, Hyunhak; Hwang, Wang-Taek; Kim, Junwoo; Koo, Jeongmin; Ko, Taeg Yeoung; Ryu, Sunmin; Wang, Gunuk; Lee, Tae-Woo; Lee, Takhee
- Date Issued
- 2017-12
- Publisher
- AMER CHEMICAL SOC
- Abstract
- In this study, we fabricated and characterized vertical molecular junctions consisting of self-assembled monolayers of benzenedithiol (BDT) with a p-doped multilayer graphene electrode. The p-type doping of a graphene film was performed by treating pristine graphene (work function of similar to 4.40 eV) with trifluoromethanesulfonic (TFMS) acid, producing a significantly increased work function (similar to 5.23 eV). The p-doped graphene-electrode molecular junctions statistically showed an order of magnitude higher current density and a lower charge injection barrier height than those of the pristine graphene-electrode molecular junctions, as a result of interface engineering. This enhancement is due to the increased work function of the TFMS-treated p-doped graphene electrode in the highest occupied molecular orbital-mediated tunneling molecular junctions. The validity of these results was proven by a theoretical analysis based on a coherent transport model that considers asymmetric couplings at the electrode-molecule interfaces.
- Keywords
- SELF-ASSEMBLED MONOLAYERS; LIGHT-EMITTING-DIODES; METAL WORK FUNCTION; FILMS; RESISTANCE; CONTACTS; DEVICES
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/50969
- DOI
- 10.1021/acsami.7b13156
- ISSN
- 1944-8244
- Article Type
- Article
- Citation
- ACS Applied Materials & Interfaces, vol. 9, no. 48, page. 42043 - 42049, 2017-12
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- There are no files associated with this item.
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