Chemical Vapor Deposition of Bernal-Stacked Graphene on a Cu Surface by Breaking the Carbon Solubility Symmetry in Cu Foils
SCIE
SCOPUS
- Title
- Chemical Vapor Deposition of Bernal-Stacked Graphene on a Cu Surface by Breaking the Carbon Solubility Symmetry in Cu Foils
- Authors
- Yoo, Min Seok; Lee, Hyo Chan; Lee, Siyoung; Lee, Seon Baek; Lee, Nam-Suk; Cho, Kilwon
- Date Issued
- 2017-08
- Publisher
- WILEY-V C H VERLAG GMBH
- Abstract
- The synthesis of Bernal-stacked multilayer graphene over large areas is intensively investigated due to the value of this material's tunable electronic structure, which makes it promising for use in a wide range of optoelectronic applications. Multilayer graphene is typically formed via chemical vapor deposition onto a metal catalyst, such as Ni, a Cu-Ni alloy, or a Cu pocket. These methods, however, require sophisticated control over the process parameters, which limits the process reproducibility and reliability. Here, a new synthetic method for the facile growth of large-area Bernal-stacked multilayer graphene with precise layer control is proposed. A thin Ni film is deposited onto the back side of a Cu foil to induce controlled diffusion of carbon atoms through bulk Cu from the back to the front. The resulting multilayer graphene exhibits a 97% uniformity and a sheet resistance of 50 Omega sq(-1) with a 90% transmittance after doping. The growth mechanism is elucidated and a generalized kinetic model is developed to describe Bernal-stacked multilayer graphene growth by the carbon atoms diffused through bulk Cu.
- Keywords
- HIGH-QUALITY GRAPHENE; FEW-LAYER GRAPHENE; NI ALLOY FOILS; BILAYER GRAPHENE; LARGE-AREA; HOMOGENOUS GROWTH; TRILAYER GRAPHENE; COPPER; SEGREGATION; BANDGAP
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/51048
- DOI
- 10.1002/adma.201700753
- ISSN
- 0935-9648
- Article Type
- Article
- Citation
- ADVANCED MATERIALS, vol. 29, no. 32, 2017-08
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