The Effect of La2O3 Capping Layer Thickness on Hot Carrier Degradation of n-MOSFETs with High-k/Metal Gate Stack
- Title
- The Effect of La2O3 Capping Layer Thickness on Hot Carrier Degradation of n-MOSFETs with High-k/Metal Gate Stack
- Authors
- 강봉구; 김동우
- Date Issued
- 2011-09-28
- Publisher
- THE JAPAN SOCIETY OF APPLIED PHYSICS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/59927
- Article Type
- Conference
- Citation
- SSDM(International Conference on Solid State Devices and Materials), 2011-09-28
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- There are no files associated with this item.
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