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Indium composition fluctuation in InGaN well layer of LED devices analyzed by

Title
Indium composition fluctuation in InGaN well layer of LED devices analyzed by
Authors
박찬경구길호이봉호
Date Issued
2011-07-10
Publisher
International Conference on Nitride Semiconductor
URI
https://oasis.postech.ac.kr/handle/2014.oak/60899
Article Type
Conference
Citation
9th International Conference on Nitride Semiconductor, 2011-07-10
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박찬경PARK, CHAN GYUNG
Dept of Materials Science & Enginrg
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