First principles study of topological insulating behavior in narrow-gap semicondutors
- Title
- First principles study of topological insulating behavior in narrow-gap semicondutors
- Authors
- 지승훈
- Date Issued
- 2010-08-25
- Publisher
- 한국재료학회
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/61887
- Article Type
- Conference
- Citation
- IUMRS-ICEM 2010, 2010-08-25
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.