DC Field | Value | Language |
---|---|---|
dc.contributor.author | 이흥순 | en_US |
dc.date.accessioned | 2014-12-01T11:46:30Z | - |
dc.date.available | 2014-12-01T11:46:30Z | - |
dc.date.issued | 2010 | en_US |
dc.identifier.other | OAK-2014-00181 | en_US |
dc.identifier.uri | http://postech.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000000563850 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/683 | - |
dc.description | Master | en_US |
dc.description.abstract | We observe that the Si/Ge nanotube was formed by “self-bending” process of Si/Ge films using a molecular dynamics simulation. This bending phenomenon is showed by internal stresses in the films due to the surface reconstruction and lattice parameter misfit. We demonstrate that a main factor determining bending direction and rate is the misfit stress. And we find that the reconstruction stress of a bottom surface strongly affects the entire self-bending process. The film thickness is also a decisive factor in this process. The thickness limit for the formation of the Si/Ge nanotubes is observed | en_US |
dc.language | kor | en_US |
dc.publisher | 포항공과대학교 | en_US |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Self-bending process에 의한 이중 층 Si/Ge 나노 튜브 형성: 분자 동역학 연구 | en_US |
dc.type | Thesis | en_US |
dc.contributor.college | 일반대학원 신소재공학과 | en_US |
dc.date.degree | 2010- 2 | en_US |
dc.type.docType | Thesis | - |
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