The Electrical Variations due to Grain Boundary using Voronoi Method in Tunneling Field-Effect-Transistor (TFET) of Polysilicon Nanowire Channel
- Title
- The Electrical Variations due to Grain Boundary using Voronoi Method in Tunneling Field-Effect-Transistor (TFET) of Polysilicon Nanowire Channel
- Authors
- 이정수
- Date Issued
- 2015-07-01
- Publisher
- NANO KOREA
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/70043
- Article Type
- Conference
- Citation
- NANO KOREA 2015 Symposium, 2015-07-01
- Files in This Item:
- There are no files associated with this item.
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