Investigation of oxide traps at SiC/SiO2 interfacial layer in SiC DMOSFET for high-power applications
- Title
- Investigation of oxide traps at SiC/SiO2 interfacial layer in SiC DMOSFET for high-power applications
- Authors
- 이정수
- Date Issued
- 2016-06-14
- Publisher
- NANO KOREA
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/72365
- Article Type
- Conference
- Citation
- NANO KOREA 2016 Symposium, 2016-06-14
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.