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dc.contributor.author김형준-
dc.date.accessioned2018-06-19T08:29:30Z-
dc.date.available2018-06-19T08:29:30Z-
dc.date.created2009-03-27-
dc.date.issued2008-02-01-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/72489-
dc.relation.isPartOfThe 15th Korean Conference on Semiconductors-
dc.relation.isPartOfThe 15th Korean Conference on Semiconductors-
dc.titleHigh Quality Epitaxial CoSi2 Using Plasma Nitridation-Mediated Epitaxy-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationThe 15th Korean Conference on Semiconductors-
dc.citation.conferenceDate2008-02-01-
dc.citation.conferencePlaceKO-
dc.citation.titleThe 15th Korean Conference on Semiconductors-
dc.contributor.affiliatedAuthor김형준-
dc.description.journalClass2-
dc.description.journalClass2-

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김형준KIM, HYUNGJUN
Dept of Materials Science & Enginrg
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