DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, M. | - |
dc.contributor.author | Kim, B. | - |
dc.contributor.author | Ryu, S.H. | - |
dc.contributor.author | Jung, S.W. | - |
dc.contributor.author | Kim, J. | - |
dc.contributor.author | Moreschini, L. | - |
dc.contributor.author | Jozwiak, C. | - |
dc.contributor.author | Rotenberg, E. | - |
dc.contributor.author | Bostwick, A. | - |
dc.contributor.author | Kim, K.S. | - |
dc.date.accessioned | 2018-07-17T10:47:06Z | - |
dc.date.available | 2018-07-17T10:47:06Z | - |
dc.date.created | 2017-12-21 | - |
dc.date.issued | 2017-03 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/92123 | - |
dc.description.abstract | van der Waals two-dimensional (2D) semiconductors have emerged as a class of materials with promising device characteristics owing to the intrinsic band gap. For realistic applications, the ideal is to modify the band gap in a controlled manner by a mechanism that can be generally applied to this class of materials. Here, we report the observation of a universally tunable band gap in the family of bulk 2H transition metal dichalcogenides (TMDs) by in situ surface doping of Rb atoms. A series of angle-resolved photoemission spectra unexceptionally shows that the band gap of TMDs at the zone corners is modulated in the range of 0.8-2.0 eV, which covers a wide spectral range from visible to near-infrared, with a tendency from indirect to direct band gap. A key clue to understanding the mechanism of this band-gap engineering is provided by the spectroscopic signature of symmetry breaking and resultant spin-splitting, which can be explained by the formation of 2D electric dipole layers within the surface bilayer of TMDs. Our results establish the surface Stark effect as a universal mechanism of band-gap engineering on the basis of the strong 2D nature of van der Waals semiconductors. ? 2017 American Chemical Society. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.relation.isPartOf | NANO LETTERS | - |
dc.subject | III-V semiconductors | - |
dc.subject | Infrared devices | - |
dc.subject | Semiconductor doping | - |
dc.subject | Stark effect | - |
dc.subject | Transition metals | - |
dc.subject | Van der Waals forces | - |
dc.subject | Angle-resolved photoemission | - |
dc.subject | Band gap engineering | - |
dc.subject | Device characteristics | - |
dc.subject | Giant stark effects | - |
dc.subject | Realistic applications | - |
dc.subject | Spectroscopic signatures | - |
dc.subject | Transition metal dichalcogenides | - |
dc.subject | Two-dimensional semiconductors | - |
dc.subject | Energy gap | - |
dc.title | Universal Mechanism of Band-Gap Engineering in Transition-Metal Dichalcogenides | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acs.nanolett.6b04775 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | NANO LETTERS, v.17, no.3, pp.1610 - 1615 | - |
dc.identifier.wosid | 000396185800042 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 1615 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 1610 | - |
dc.citation.title | NANO LETTERS | - |
dc.citation.volume | 17 | - |
dc.contributor.affiliatedAuthor | Jung, S.W. | - |
dc.contributor.affiliatedAuthor | Kim, J. | - |
dc.contributor.affiliatedAuthor | Kim, K.S. | - |
dc.identifier.scopusid | 2-s2.0-85014905928 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 31 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | ELECTRONIC-STRUCTURE | - |
dc.subject.keywordPlus | MOS2 | - |
dc.subject.keywordPlus | MONOLAYER | - |
dc.subject.keywordPlus | FIELD | - |
dc.subject.keywordPlus | WSE2 | - |
dc.subject.keywordAuthor | Band-gap engineering | - |
dc.subject.keywordAuthor | two-dimensional semiconductors | - |
dc.subject.keywordAuthor | giant Stark effect | - |
dc.subject.keywordAuthor | transition-metal dichalcogenides | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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