Reversible Fermi Level Tuning of a Sb2Te3 Topological Insulator by Structural Deformation
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SCOPUS
- Title
- Reversible Fermi Level Tuning of a Sb2Te3 Topological Insulator by Structural Deformation
- Authors
- Park, SH; Chae, J; Jeong, KS; Kim, TH; Choi, H; Cho, MH; Hwang, I; Bae, MH; Kang, C
- Date Issued
- 2015-06
- Publisher
- ACS
- Abstract
- For three-dimensional (3D) topological insulators that have a layered structure, strain was used to control critical physical properties. Here, we show that tensile strain decreases bulk carrier density while accentuating transport of topological surface state using temperature-dependent resistance and magneto-resistance measurements, terahertz-time domain spectroscopy and density functional theory calculations. The induced strain was confirmed by transmittance X-ray scattering measurements. The results show the possibility of reversible topological surface state device control using structural deformation.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/92375
- DOI
- 10.1021/ACS.NANOLETT.5B00553
- ISSN
- 1530-6984
- Article Type
- Article
- Citation
- Nano Letters, vol. 15, no. 6, page. 3820 - 3826, 2015-06
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- There are no files associated with this item.
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