Side Effect of Mechanical Stress on High-voltage nMOSFET

Abstract

Consecutive effects of mechanical stress applied on high-voltage nMOSFETs (HVNMOS) were examined. A TCAD simulation was used to reproduce a study that compared a conventional HVNMOS and a strained-Si channel HVNMOS. The product shows that the simulation has worked as intended and it can be used for further analyzation about relation between mechanical stress and its effect on the devices. Electric properties of mechanically stressed HVNMOS using 3-point bending method were measured, under tensile and compressive stress. The result can be used as reference for future studies. Combining these two experiments, quantitative interpretation about effects of mechanical stress is expected to be achieved.