Application of nonalloyed PdGe ohmic contact to self-aligned gate AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor
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SCOPUS
- Title
- Application of nonalloyed PdGe ohmic contact to self-aligned gate AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor
- Authors
- Oh, JW; Lee, JL
- Date Issued
- 1999-05-10
- Publisher
- AMER INST PHYSICS
- Abstract
- A self-aligned gate pseudomorphic high-electron-mobility transistor (PHEMT) was developed through nonalloyed PdGe ohmic contact on an n(+)-GaAs cap layer. The lowest contact resistivity obtained was 1.2X10(-7) Ohm cm(2) at 300 degrees C. This allows us to change the sequence on the formation of source/drain and gate electrodes in the process of PHEMT fabrication, namely self-aligned gate PHEMT. Performance of the self-aligned gate PHEMT was remarkably pronounced with annealing temperature or the decrease of contact resistivity. This is due to the solid-phase regrowth of highly Ge-doped GaAs below the PdGe contact, which acts to reduce barrier height for electron tunneling. (C) 1999 American Institute of Physics. [S0003-6951(99)03619-0].
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9386
- DOI
- 10.1063/1.124040
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 74, no. 19, page. 2866 - 2868, 1999-05-10
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