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Cited 52 time in webofscience Cited 54 time in scopus
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dc.contributor.authorKim, DW-
dc.contributor.authorKim, DH-
dc.contributor.authorKang, BS-
dc.contributor.authorNoh, TW-
dc.contributor.authorLee, DR-
dc.contributor.authorLee, KB-
dc.date.accessioned2015-06-25T01:05:09Z-
dc.date.available2015-06-25T01:05:09Z-
dc.date.created2009-02-28-
dc.date.issued1999-04-12-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000000684en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9387-
dc.description.abstractGrowth behaviors of SrTiO3/LaAlO3 films could be varied substantially by controlling terminating atomic layers of the substrates. In a film on the LaO-terminated substrate, strain-induced roughening was observed. In a film on the AlO2-terminated substrate, the first atomic layer of the interface seemed to have lots of defects. However, the stress became quickly relaxed, so a SrTiO3 film could be grown in a layer-by-layer mode after a few monolayers. All these observations could be explained in terms of chemical matching between the atomic layers at the interface. (C) 1999 American Institute of Physics. [S0003-6951(99)01715-5].-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleRoles of the first atomic layers in growth of SrTiO3 films on LaAlO3 substrates-
dc.typeArticle-
dc.contributor.college물리학과en_US
dc.identifier.doi10.1063/1.123792-
dc.author.googleKIM, DWen_US
dc.author.googleKIM, DHen_US
dc.author.googleLEE, KBen_US
dc.author.googleLEE, DRen_US
dc.author.googleNOH, TWen_US
dc.author.googleKANG, BSen_US
dc.relation.volume74en_US
dc.relation.issue15en_US
dc.relation.startpage2176en_US
dc.relation.lastpage2178en_US
dc.contributor.id10052251en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.74, no.15, pp.2176 - 2178-
dc.identifier.wosid000079583000025-
dc.date.tcdate2019-01-01-
dc.citation.endPage2178-
dc.citation.number15-
dc.citation.startPage2176-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume74-
dc.contributor.affiliatedAuthorLee, KB-
dc.identifier.scopusid2-s2.0-0032607250-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc47-
dc.type.docTypeArticle-
dc.subject.keywordPlusYBA2CU3O7-DELTA-
dc.subject.keywordPlusNUCLEATION-
dc.subject.keywordPlusSURFACE-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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이기봉LEE, KI BONG
Div. of Advanced Nuclear Enginrg
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