DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shannigrahi, SR | - |
dc.contributor.author | Jang, HM | - |
dc.date.accessioned | 2015-06-25T01:06:51Z | - |
dc.date.available | 2015-06-25T01:06:51Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2001-08-13 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000002113 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9413 | - |
dc.description.abstract | The development of lead zirconate titanate (PZT)-based capacitors has been a long time goal of ferroelectric random access memories (FRAM). However, PZT-based perovskites with common platinum (Pt) electrodes have suffered from a significant reduction of the remanent polarization (P-r) after a certain number of read/write cycles (electrical fatigue). We now report the development of fatigue-free lanthanum-modified PZT capacitors using common Pt electrodes. The capacitors fabricated at 580 degreesC by applying a PZT seed layer exhibited fatigue-free behavior up to 6.5x10(10) switching cycles, a quite stable charge retention profile with time, and comparatively high P-r values, all of which assure their suitability for practical FRAM applications. (C) 2001 American Institute of Physics. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Fatigue-free lead zirconate titanate-based capacitors for nonvolatile memories | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.1392970 | - |
dc.author.google | Shannigrahi, SR | en_US |
dc.author.google | Jang, HM | en_US |
dc.relation.volume | 79 | en_US |
dc.relation.issue | 7 | en_US |
dc.relation.startpage | 1051 | en_US |
dc.relation.lastpage | 1053 | en_US |
dc.contributor.id | 10084272 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.79, no.7, pp.1051 - 1053 | - |
dc.identifier.wosid | 000170277500053 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 1053 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 1051 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 79 | - |
dc.contributor.affiliatedAuthor | Jang, HM | - |
dc.identifier.scopusid | 2-s2.0-0035855054 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 78 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | FERROELECTRIC THIN-FILMS | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
dc.subject.keywordPlus | RETENTION | - |
dc.subject.keywordPlus | PHYSICS | - |
dc.subject.keywordPlus | IMPRINT | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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