DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jang, HW | - |
dc.contributor.author | Lee, JH | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2015-06-25T01:07:57Z | - |
dc.date.available | 2015-06-25T01:07:57Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2002-05-27 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000002644 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9430 | - |
dc.description.abstract | The change of band banding with the crystal polarity of GaN films was investigated using high-resolution photoemission spectroscopy. Compared with a N-face sample, the Ga-face sample exhibited higher Schottky barrier height and lower contact resistivity of a Ti/Al-based Ohmic contact. It was found that Ga-face GaN has a larger surface band bending than N-face GaN by 1.4 eV due to spontaneous polarization, resulting in higher Schottky barrier height. The lower Ohmic contact resistivity on Ga-face GaN originated from the formation of polarization-induced two-dimensional electron gas at the interface of AlN with GaN. (C) 2002 American Institute of Physics. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Characterization of band bendings on Ga-face and N-face GaN films grown by metalorganic chemical-vapor deposition | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.1481782 | - |
dc.author.google | Jang, HW | en_US |
dc.author.google | Lee, JH | en_US |
dc.author.google | Lee, JL | en_US |
dc.relation.volume | 80 | en_US |
dc.relation.issue | 21 | en_US |
dc.relation.startpage | 3955 | en_US |
dc.relation.lastpage | 3957 | en_US |
dc.contributor.id | 10105416 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.80, no.21, pp.3955 - 3957 | - |
dc.identifier.wosid | 000175709000025 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 3957 | - |
dc.citation.number | 21 | - |
dc.citation.startPage | 3955 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 80 | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-79955998321 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 105 | - |
dc.description.scptc | 105 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | 2-DIMENSIONAL ELECTRON GASES | - |
dc.subject.keywordPlus | OHMIC CONTACTS | - |
dc.subject.keywordPlus | ALGAN/GAN HETEROSTRUCTURES | - |
dc.subject.keywordPlus | CRYSTAL-POLARITY | - |
dc.subject.keywordPlus | TI/AL CONTACTS | - |
dc.subject.keywordPlus | EPITAXY | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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