DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, TS | - |
dc.contributor.author | Je, JH | - |
dc.date.accessioned | 2015-06-25T01:08:20Z | - |
dc.date.available | 2015-06-25T01:08:20Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2002-02-25 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000002485 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9436 | - |
dc.description.abstract | The thermal evolution of interface roughness during cobalt silicide formation in the Co/Ti/Si(001) and Co/Si(001) systems was investigated using real-time synchrotron x-ray scattering measurement. We find that the enhancement of the CoSi2/Si(001) interface roughness is caused by the retardation of silicide phase formation almost up to the CoSi2 nucleation temperature. In the Co(120 Angstrom)/Ti(50 Angstrom)/Si(001), the interface roughness increases only to 6 Angstrom during silicidation, by suppressing the reaction between the Co overlayer and Si substrate with a Ti diffusion barrier nearly up to the CoSi2 nucleation temperature of 660degreesC. In the Co(120 Angstrom)/Si(001), however, the reaction already starts at a low temperature of 300degreesC, resulting in a significant rise of the interface roughness up to 13 Angstrom, which is mainly attributed to the formation of Si{111} facets that act as the nucleation sites of misoriented CoSi2 grains. (C) 2002 American Institute of Physics. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Real-time x-ray scattering study on the thermal evolution of interface roughness in COSi2 formation | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.1455149 | - |
dc.author.google | Kang, TS | en_US |
dc.author.google | Je, JH | en_US |
dc.relation.volume | 80 | en_US |
dc.relation.issue | 8 | en_US |
dc.relation.startpage | 1361 | en_US |
dc.relation.lastpage | 1363 | en_US |
dc.contributor.id | 10123980 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.80, no.8, pp.1361 - 1363 | - |
dc.identifier.wosid | 000174009800015 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 1363 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 1361 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 80 | - |
dc.contributor.affiliatedAuthor | Je, JH | - |
dc.identifier.scopusid | 2-s2.0-79956024291 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 8 | - |
dc.description.scptc | 10 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | EPITAXIAL COSI2 | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | (100)SI | - |
dc.subject.keywordPlus | SI | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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