DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, JK | - |
dc.contributor.author | Gessmann, T | - |
dc.contributor.author | Luo, H | - |
dc.contributor.author | Schubert, EF | - |
dc.date.accessioned | 2015-06-25T01:09:52Z | - |
dc.date.available | 2015-06-25T01:09:52Z | - |
dc.date.created | 2009-09-07 | - |
dc.date.issued | 2004-05-31 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000018785 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9460 | - |
dc.description.abstract | A GaInN light-emitting diode (LED) employing an omni-directional reflector (ODR) is presented. The ODR consists of a RuO2 ohmic contact to p-type GaN, a quarter-wave thick SiO2 low-index layer perforated by an array of micro-contacts, and an Ag layer. Calculations predict a 98% angle-averaged reflectivity at lambda=450 nm for an GaN/SiO2/Ag ODR, much higher than that for a 20 period Al0.25Ga0.75N/GaN distributed Bragg reflector (49%) and an Ag reflector (94%). It is shown that the RuO2/SiO2/Ag ODR has higher reflectivity than Ni/Au and even Ag reflectors, leading to a higher light extraction efficiency of GaInN LEDs with ODR. The electrical properties of the ODR-LED are comparable to those LEDs with a conventional Ni/Au contact. (C) 2004 American Institute of Physics. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | GaInN light-emitting diodes with RuO2/SiO2/Ag omni-directional reflector | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.1757634 | - |
dc.author.google | Kim, JK | en_US |
dc.author.google | Gessmann, T | en_US |
dc.author.google | Schubert, EF | en_US |
dc.author.google | Luo, H | en_US |
dc.relation.volume | 84 | en_US |
dc.relation.issue | 22 | en_US |
dc.relation.startpage | 4508 | en_US |
dc.relation.lastpage | 4510 | en_US |
dc.contributor.id | 10100864 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.84, no.22, pp.4508 - 4510 | - |
dc.identifier.wosid | 000221537500050 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 4510 | - |
dc.citation.number | 22 | - |
dc.citation.startPage | 4508 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 84 | - |
dc.contributor.affiliatedAuthor | Kim, JK | - |
dc.identifier.scopusid | 2-s2.0-3042702992 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 81 | - |
dc.description.scptc | 87 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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