DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jang, HW | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2015-06-25T01:10:14Z | - |
dc.date.available | 2015-06-25T01:10:14Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2004-12-13 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000004723 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9466 | - |
dc.description.abstract | The mechanism for ohmic contact formation of Ni/Ag contacts on p-type GaN was investigated using synchrotron photoemission spectroscopy. A low contact resistivity of 6.6x10(-5) Omega cm(2) was obtained from Ni(50 A)/Ag(1200 A) contact after annealing at 500degreesC in O-2 ambient. Ni out-diffused to form a NiO and Ag in-diffused into the contact interface during the oxidation annealing. Out-diffused Ga atoms from GaN could dissolve in the Ag layer to form Ag-Ga solid solutions, leaving Ga vacancies below the contact. Ga vacancies could increase the net hole concentration and reduce the surface band bending, resulting in the ohmic contact formation. (C) 2004 American Institute of Physics. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Mechanism for ohmic contact formation of Ni/Ag contacts on p-type GaN | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.1835535 | - |
dc.author.google | Jang, HW | en_US |
dc.author.google | Lee, JL | en_US |
dc.relation.volume | 85 | en_US |
dc.relation.issue | 24 | en_US |
dc.relation.startpage | 5920 | en_US |
dc.relation.lastpage | 5922 | en_US |
dc.contributor.id | 10105416 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.85, no.24, pp.5920 - 5922 | - |
dc.identifier.wosid | 000225620200035 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 5922 | - |
dc.citation.number | 24 | - |
dc.citation.startPage | 5920 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 85 | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-20444479833 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 79 | - |
dc.description.scptc | 81 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | LOW-RESISTANCE | - |
dc.subject.keywordPlus | OXIDIZED NI/AU | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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