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dc.contributor.authorHan, SY-
dc.contributor.authorLee, JL-
dc.date.accessioned2015-06-25T01:10:26Z-
dc.date.available2015-06-25T01:10:26Z-
dc.date.created2009-02-28-
dc.date.issued2004-09-27-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000004578en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9469-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleResponse to "Comment on 'Interpretation of Fermi level pinning on 4H-SiC using synchrotron photoemission spectroscopy'" [Appl. Phys. Lett. 85, 2661 (2004)]-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1063/1.1795356-
dc.author.googleHan, SYen_US
dc.author.googleLee, JLen_US
dc.relation.volume85en_US
dc.relation.issue13en_US
dc.relation.startpage2663en_US
dc.relation.lastpage2664en_US
dc.contributor.id10105416en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.85, no.13, pp.2663 - 2664-
dc.identifier.wosid000224178300072-
dc.date.tcdate2018-03-23-
dc.citation.endPage2664-
dc.citation.number13-
dc.citation.startPage2663-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume85-
dc.contributor.affiliatedAuthorLee, JL-
dc.description.journalClass1-
dc.description.journalClass1-
dc.type.docTypeEditorial Material-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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이종람LEE, JONG LAM
Dept of Materials Science & Enginrg
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