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dc.contributor.authorBAEK, ROCK HYUN-
dc.contributor.authorJun-Sik Yoon-
dc.contributor.authorJinsu Jeong-
dc.contributor.authorSeunghwan Lee-
dc.date.accessioned2019-02-25T04:45:52Z-
dc.date.available2019-02-25T04:45:52Z-
dc.date.created2019-01-28-
dc.date.issued2018-09-12-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/94770-
dc.languageEnglish-
dc.publisherJapanese Society of Applied Physics-
dc.relation.isPartOf2018 International Conference on Solid State Devices and Materials (SSDM 2018)-
dc.relation.isPartOfExtended Abstracts of the 2018 International Conference on Solid State Devices and Materials-
dc.titleNanosheet Number and Width Optimization of Multi Stacked NanoSheet FET for 7-nm Node SoC Application-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitation2018 International Conference on Solid State Devices and Materials (SSDM 2018), pp.877 - 878-
dc.citation.conferenceDate2018-09-09-
dc.citation.conferencePlaceJA-
dc.citation.conferencePlaceTokyo-
dc.citation.endPage878-
dc.citation.startPage877-
dc.citation.title2018 International Conference on Solid State Devices and Materials (SSDM 2018)-
dc.contributor.affiliatedAuthorBAEK, ROCK HYUN-
dc.contributor.affiliatedAuthorJun-Sik Yoon-
dc.contributor.affiliatedAuthorJinsu Jeong-
dc.contributor.affiliatedAuthorSeunghwan Lee-
dc.description.journalClass1-
dc.description.journalClass1-

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