DC Field | Value | Language |
---|---|---|
dc.contributor.author | Han, SY | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2015-06-25T01:11:13Z | - |
dc.date.available | 2015-06-25T01:11:13Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2004-01-26 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000003975 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9481 | - |
dc.description.abstract | The Fermi level movements on 4H-SiC were observed in in situ deposited Ni contact using synchrotron radiation photoemission spectroscopy. For n-type SiC, the surface band bending increased about 0.75 eV with the Ni deposition, meaning the shift of Fermi level towards valence band edge. The barrier height was calculated to be 1.61 eV, consistent with the Schottky-Mott theory (1.65 eV). For p-type SiC, however, the barrier height was 0.95 eV, lower than theoretical value (1.61 eV). The large discrepancy is due to the defect level (activation energy=0.96 eV) observed by deep level transient spectroscopy, leading to a major role in pinning the Fermi level in p-type SiC. (C) 2004 American Institute of Physics. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Interpretation of Fermi level pinning on 4H-SiC using synchrotron photoemission spectroscopy | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.1644334 | - |
dc.author.google | Han, SY | en_US |
dc.author.google | Lee, JL | en_US |
dc.relation.volume | 84 | en_US |
dc.relation.issue | 4 | en_US |
dc.relation.startpage | 538 | en_US |
dc.relation.lastpage | 540 | en_US |
dc.contributor.id | 10105416 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.84, no.4, pp.538 - 540 | - |
dc.identifier.wosid | 000188316500028 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 540 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 538 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 84 | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-1242307316 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 18 | - |
dc.description.scptc | 15 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | P-TYPE 4H | - |
dc.subject.keywordPlus | TRANSIENT SPECTROSCOPY | - |
dc.subject.keywordPlus | SCHOTTKY CONTACTS | - |
dc.subject.keywordPlus | DEEP LEVELS | - |
dc.subject.keywordPlus | TUNGSTEN | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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