DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, TH | - |
dc.contributor.author | Seo, J | - |
dc.contributor.author | Choi, BY | - |
dc.contributor.author | Song, YJ | - |
dc.contributor.author | Choi, J | - |
dc.contributor.author | Kuk, Y | - |
dc.contributor.author | Kahng, SJ | - |
dc.date.accessioned | 2015-06-25T01:11:17Z | - |
dc.date.available | 2015-06-25T01:11:17Z | - |
dc.date.created | 2014-01-29 | - |
dc.date.issued | 2005-09-19 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000028676 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9482 | - |
dc.description.abstract | The strain-relieving mechanism and local electronic density of states of a wetting film, was studied in the Ag/W system using scanning tunneling microscopy and spectroscopy. In the Ag wetting film, a periodic bright ridge structure was observed along the two equivalent directions, relieving mixed compressive-tensile strain. Two unoccupied electronic states were observed between the ridges, while the other two occupied electronic states were observed at the ridges. The Ag atoms occupying the bridge sites contribute to relieve the elastic strain and to induce the occupied electronic states. (c) 2005 American Institute of Physics. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | American Institute of Physics | - |
dc.relation.isPartOf | Applied Physics Letters | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Atomic-level strain-relieving mechanism and local electronic structure of a wetting film | - |
dc.type | Article | - |
dc.contributor.college | 물리학과 | en_US |
dc.identifier.doi | 10.1063/1.2035325 | - |
dc.author.google | Kim, TH | en_US |
dc.author.google | Seo, J | en_US |
dc.author.google | Kahng, SJ | en_US |
dc.author.google | Kuk, Y | en_US |
dc.author.google | Choi, J | en_US |
dc.author.google | Song, YJ | en_US |
dc.author.google | Choi, BY | en_US |
dc.relation.volume | 87 | en_US |
dc.relation.issue | 12 | en_US |
dc.contributor.id | 10127399 | en_US |
dc.relation.journal | Applied Physics Letters | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Applied Physics Letters, v.87, no.12 | - |
dc.identifier.wosid | 000231907200056 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 12 | - |
dc.citation.title | Applied Physics Letters | - |
dc.citation.volume | 87 | - |
dc.contributor.affiliatedAuthor | Kim, TH | - |
dc.identifier.scopusid | 2-s2.0-28344448250 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 1 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | HYDROGEN-SURFACTANT | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | W(110) | - |
dc.subject.keywordPlus | GE | - |
dc.subject.keywordPlus | EPITAXY | - |
dc.subject.keywordPlus | AU | - |
dc.subject.keywordPlus | AG | - |
dc.subject.keywordPlus | SI | - |
dc.subject.keywordPlus | CU | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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