DC Field | Value | Language |
---|---|---|
dc.contributor.author | Litton, CW | - |
dc.contributor.author | Johnstone, D | - |
dc.contributor.author | Akarca-Biyikli, S | - |
dc.contributor.author | Ramaiah, KS | - |
dc.contributor.author | Bhat, I | - |
dc.contributor.author | Chow, TP | - |
dc.contributor.author | Kim, JK | - |
dc.contributor.author | Schubert, EF | - |
dc.date.accessioned | 2015-06-25T01:12:54Z | - |
dc.date.available | 2015-06-25T01:12:54Z | - |
dc.date.created | 2009-09-07 | - |
dc.date.issued | 2006-03-20 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000018799 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9508 | - |
dc.description.abstract | Changing the ratio of carbon to silicon during the epitaxial 4H-SiC growth is expected to alter the dominant deep level trap, which has been attributed to a native defect. The C/Si ratio was changed from one to six during epitaxial growth of SiC. Diodes fabricated on the epitaxial layer were then characterized using current-voltage and deep level transient spectroscopy. The single peak at 340 K (Z1/Z2 peak), was deconvolved into two traps, closely spaced in energy. The concentration of one of the Z1/Z2 traps decreased with increasing C/Si ratio. This result opposes theoretical predictions of carbon interstitial components, and supports assignment to a silicon antisite or carbon vacancy relationship. The concentration of the second component of the peak at 340 K did not depend on the C/Si ratio, which would indicate an impurity in an interstitial site. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Effect of C/Si ratio on deep levels in epitaxial 4H-SiC | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.2161388 | - |
dc.author.google | Litton, CW | en_US |
dc.author.google | Johnstone, D | en_US |
dc.author.google | Schubert, EF | en_US |
dc.author.google | Kim, JK | en_US |
dc.author.google | Chow, TP | en_US |
dc.author.google | Bhat, I | en_US |
dc.author.google | Ramaiah, KS | en_US |
dc.author.google | Akarca-Biyikli, S | en_US |
dc.relation.volume | 88 | en_US |
dc.relation.issue | 12 | en_US |
dc.contributor.id | 10100864 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.88, no.12 | - |
dc.identifier.wosid | 000236250100046 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 12 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 88 | - |
dc.contributor.affiliatedAuthor | Kim, JK | - |
dc.identifier.scopusid | 2-s2.0-33645533102 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 23 | - |
dc.description.scptc | 26 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | 4H SILICON-CARBIDE | - |
dc.subject.keywordPlus | TRANSIENT SPECTROSCOPY | - |
dc.subject.keywordPlus | DEFECT CENTERS | - |
dc.subject.keywordPlus | ANNIHILATION | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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