Enhancement of hole injection in pentacene organic thin-film transistor of O-2 plasma-treated Au electrodes
SCIE
SCOPUS
- Title
- Enhancement of hole injection in pentacene organic thin-film transistor of O-2 plasma-treated Au electrodes
- Authors
- Kim, WK; Hong, K; Leea, JL
- Date Issued
- 2006-10-02
- Publisher
- AMER INST PHYSICS
- Abstract
- The effect of oxygen plasma treatment on enhancement of hole mobility was demonstrated using pentacene organic thin-film transistors (OTFTs) with bottom-contact Au electrodes. Linear field-effect mobility increased from 3.2x10(-2) to 7.4x10(-2) cm(2)/V s as the Au electrodes were treated with O-2 plasma. Secondary electron emission spectra revealed that the work function of oxygen plasma-treated Au is 0.5 eV higher than that of untreated Au. This led to a reduced hole injection barrier at the interface of Au with pentacene, increasing the field-effect mobility of OTFTs. (c) 2006 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9523
- DOI
- 10.1063/1.2360198
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 89, no. 14, 2006-10-02
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