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Cited 20 time in webofscience Cited 20 time in scopus
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dc.contributor.authorKim, YK-
dc.contributor.authorMorioka, H-
dc.contributor.authorUeno, R-
dc.contributor.authorYokoyama, S-
dc.contributor.authorFunakubo, H-
dc.contributor.authorLee, K-
dc.contributor.authorBaik, S-
dc.date.accessioned2015-06-25T01:14:44Z-
dc.date.available2015-06-25T01:14:44Z-
dc.date.created2009-02-28-
dc.date.issued2006-06-19-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000006012en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9536-
dc.description.abstractThe ferroelastic twin-domain structures and piezoelectric properties were investigated in epitaxial Pb(Zr-0.35,Ti-0.65)O-3 thin films with various c-domain volume fractions by metal organic chemical vapor deposition on (100)(c)SrRuO3/(100)SrTiO3 substrates. The domain structures could be characterized into three regions: a-domain dominant, c-domain dominant, and their mixed domain regions. The mixed domain structure is quite unusual but formed a bilayer with two regions of different a/c domain proportions: the bottom layer is the a(1)-a(2) domain structure and top layer is the a-c domain structure. The films of the mixed region have attained largest piezoelectric coefficients, d(33), presumably due to enhanced a-to-c domain switching. (c) 2006 American Institute of Physics.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleDomain structures and piezoelectric properties in epitaxial Pb(Zr-0.35,Ti-0.65)O-3 thin films-
dc.typeArticle-
dc.contributor.college포항공과대학교en_US
dc.identifier.doi10.1063/1.2214169-
dc.author.googleKim, YKen_US
dc.author.googleMorioka, Hen_US
dc.author.googleBaik, Sen_US
dc.author.googleLee, Ken_US
dc.author.googleFunakubo, Hen_US
dc.author.googleYokoyama, Sen_US
dc.author.googleUeno, Ren_US
dc.relation.volume88en_US
dc.relation.issue25en_US
dc.contributor.id10078291en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.88, no.25-
dc.identifier.wosid000238487800064-
dc.date.tcdate2019-01-01-
dc.citation.number25-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume88-
dc.contributor.affiliatedAuthorBaik, S-
dc.identifier.scopusid2-s2.0-33745475044-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc18-
dc.description.scptc18*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusCHEMICAL-VAPOR-DEPOSITION-
dc.subject.keywordPlusMICROSTRUCTURE-
dc.subject.keywordPlusSRTIO3-
dc.subject.keywordPlusMGO-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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