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Cited 82 time in webofscience Cited 90 time in scopus
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dc.contributor.authorLim, JA-
dc.contributor.authorCho, JH-
dc.contributor.authorPark, YD-
dc.contributor.authorKim, DH-
dc.contributor.authorHwang, M-
dc.contributor.authorCho, K-
dc.date.accessioned2015-06-25T01:15:34Z-
dc.date.available2015-06-25T01:15:34Z-
dc.date.created2009-08-25-
dc.date.issued2006-02-20-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000005719en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9549-
dc.description.abstractWe show that the electrical properties of polymer thin-film transistors (PTFTs) can be enhanced by controlling the solvent properties of poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonate) (PEDOT/PSS) solution used as the inkjet-printed source and drain electrodes. Specifically, addition of dimethyl sulfoxide (DMSO) into the PEDOT/PSS solution increased the conductivity of the inkjet-printed PEDOT electrodes and remarkably reduced the contact resistance of the electrodes. The lower contact resistance of the DMSO-treated PEDOT electrode compared to the corresponding electrode without DMSO treatment may be due to enhanced interfacial stability at the contact between the printed PEDOT electrodes and the semiconductor layers. (c) 2006 American Institute of Physics.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleSolvent effect of inkjet printed source/drain electrodes on electrical properties of polymer thin-film transistors-
dc.typeArticle-
dc.contributor.college화학공학과en_US
dc.identifier.doi10.1063/1.2177642-
dc.author.googleLim, JAen_US
dc.author.googleCho, JHen_US
dc.author.googleCho, Ken_US
dc.author.googleHwang, Men_US
dc.author.googleKim, DHen_US
dc.author.googlePark, YDen_US
dc.relation.volume88en_US
dc.relation.issue8en_US
dc.relation.startpage82102en_US
dc.relation.lastpage82102en_US
dc.contributor.id10077904en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.88, no.8, pp.82102 - 82102-
dc.identifier.wosid000235553300033-
dc.date.tcdate2019-01-01-
dc.citation.endPage82102-
dc.citation.number8-
dc.citation.startPage82102-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume88-
dc.contributor.affiliatedAuthorCho, K-
dc.identifier.scopusid2-s2.0-33644526944-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc76-
dc.description.scptc81*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusCONTACT RESISTANCE-
dc.subject.keywordPlusORGANIC TRANSISTORS-
dc.subject.keywordPlusENHANCEMENT-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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조길원CHO, KIL WON
Dept. of Chemical Enginrg
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