DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lim, JA | - |
dc.contributor.author | Cho, JH | - |
dc.contributor.author | Park, YD | - |
dc.contributor.author | Kim, DH | - |
dc.contributor.author | Hwang, M | - |
dc.contributor.author | Cho, K | - |
dc.date.accessioned | 2015-06-25T01:15:34Z | - |
dc.date.available | 2015-06-25T01:15:34Z | - |
dc.date.created | 2009-08-25 | - |
dc.date.issued | 2006-02-20 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000005719 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9549 | - |
dc.description.abstract | We show that the electrical properties of polymer thin-film transistors (PTFTs) can be enhanced by controlling the solvent properties of poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonate) (PEDOT/PSS) solution used as the inkjet-printed source and drain electrodes. Specifically, addition of dimethyl sulfoxide (DMSO) into the PEDOT/PSS solution increased the conductivity of the inkjet-printed PEDOT electrodes and remarkably reduced the contact resistance of the electrodes. The lower contact resistance of the DMSO-treated PEDOT electrode compared to the corresponding electrode without DMSO treatment may be due to enhanced interfacial stability at the contact between the printed PEDOT electrodes and the semiconductor layers. (c) 2006 American Institute of Physics. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Solvent effect of inkjet printed source/drain electrodes on electrical properties of polymer thin-film transistors | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | en_US |
dc.identifier.doi | 10.1063/1.2177642 | - |
dc.author.google | Lim, JA | en_US |
dc.author.google | Cho, JH | en_US |
dc.author.google | Cho, K | en_US |
dc.author.google | Hwang, M | en_US |
dc.author.google | Kim, DH | en_US |
dc.author.google | Park, YD | en_US |
dc.relation.volume | 88 | en_US |
dc.relation.issue | 8 | en_US |
dc.relation.startpage | 82102 | en_US |
dc.relation.lastpage | 82102 | en_US |
dc.contributor.id | 10077904 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.88, no.8, pp.82102 - 82102 | - |
dc.identifier.wosid | 000235553300033 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 82102 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 82102 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 88 | - |
dc.contributor.affiliatedAuthor | Cho, K | - |
dc.identifier.scopusid | 2-s2.0-33644526944 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 76 | - |
dc.description.scptc | 81 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | CONTACT RESISTANCE | - |
dc.subject.keywordPlus | ORGANIC TRANSISTORS | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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