DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, MH | - |
dc.contributor.author | Schubert, MF | - |
dc.contributor.author | Dai, Q | - |
dc.contributor.author | Kim, JK | - |
dc.contributor.author | Schubert, EF | - |
dc.contributor.author | Piprek, J | - |
dc.contributor.author | Park, Y | - |
dc.date.accessioned | 2015-06-25T01:16:10Z | - |
dc.date.available | 2015-06-25T01:16:10Z | - |
dc.date.created | 2009-09-04 | - |
dc.date.issued | 2007-10-29 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000018669 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9558 | - |
dc.description.abstract | The efficiency droop in GaInN/GaN multiple-quantum well (MQW) light-emitting diodes is investigated. Measurements show that the efficiency droop, occurring under high injection conditions, is unrelated to junction temperature. Furthermore, the photoluminescence output as a function of excitation power shows no droop, indicating that the droop is not related to MQW efficiency but rather to the recombination of carriers outside the MQW region. Simulations show that polarization fields in the MQW and electron blocking layer enable the escape of electrons from the MQW region and thus are the physical origin of the droop. It is shown that through the use of proper quaternary AlGaInN compositions, polarization effects are reduced, thereby minimizing droop and improving efficiency. (C) 2007 American Institute of Physics. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Origin of efficiency droop in GaN-based light-emitting diodes | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.2800290 | - |
dc.author.google | Kim, MH | en_US |
dc.author.google | Schubert, MF | en_US |
dc.author.google | Park, Y | en_US |
dc.author.google | Piprek, J | en_US |
dc.author.google | Schubert, EF | en_US |
dc.author.google | Kim, JK | en_US |
dc.author.google | Dai, Q | en_US |
dc.relation.volume | 91 | en_US |
dc.relation.issue | 18 | en_US |
dc.contributor.id | 10100864 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.91, no.18 | - |
dc.identifier.wosid | 000250643600087 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 18 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 91 | - |
dc.contributor.affiliatedAuthor | Kim, JK | - |
dc.identifier.scopusid | 2-s2.0-35648977539 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 898 | - |
dc.description.scptc | 970 | * |
dc.date.scptcdate | 2018-06-152 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | QUANTUM EFFICIENCY | - |
dc.subject.keywordPlus | STRAIN DEPENDENCE | - |
dc.subject.keywordPlus | LEDS | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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