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Cited 27 time in webofscience Cited 27 time in scopus
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dc.contributor.authorKohn, VG-
dc.contributor.authorArgunova, TS-
dc.contributor.authorJe, JH-
dc.date.accessioned2015-06-25T01:17:24Z-
dc.date.available2015-06-25T01:17:24Z-
dc.date.created2009-02-28-
dc.date.issued2007-10-22-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000007253en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9577-
dc.description.abstractPhase contrast images of dislocation micropipe in SiC crystal are experimentally studied at various distances from the sample using synchrotron white beam. Computer simulation of these images enabled us to understand the peculiarities of image formation and measure the diameter of the micropipe. The phase contrast imaging of micropipes without monochromator is explained by the absorption of x rays in a thick (490 mu m) SiC crystal, effectively forming a high brilliance radiation spectrum with a pronounced maximum at 16 keV. (C) 2007 American Institute of Physics.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleStudy of micropipe structure in SiC by x-ray phase contrast imaging-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1063/1.2801355-
dc.author.googleKohn, VGen_US
dc.author.googleArgunova, TSen_US
dc.author.googleJe, JHen_US
dc.relation.volume91en_US
dc.relation.issue17en_US
dc.contributor.id10123980en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.91, no.17-
dc.identifier.wosid000250468200024-
dc.date.tcdate2019-01-01-
dc.citation.number17-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume91-
dc.contributor.affiliatedAuthorJe, JH-
dc.identifier.scopusid2-s2.0-35549006327-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc22-
dc.description.scptc20*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusSYNCHROTRON-RADIATION-
dc.subject.keywordPlusSCREW DISLOCATIONS-
dc.subject.keywordPlusSILICON-CARBIDE-
dc.subject.keywordPlusGROWTH-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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제정호JE, JUNG HO
Dept of Materials Science & Enginrg
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