DC Field | Value | Language |
---|---|---|
dc.contributor.author | An, SJ | - |
dc.contributor.author | Yi, GC | - |
dc.date.accessioned | 2015-06-25T01:17:39Z | - |
dc.date.available | 2015-06-25T01:17:39Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2007-09-17 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000007180 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9581 | - |
dc.description.abstract | The authors report on the fabrication and characteristics of near ultraviolet nanorod light emitting diodes (LEDs) composed of n-GaN/ZnO nanorod heterostructures on p-GaN substrates. The nanorod LEDs consist of the vertically aligned n-GaN/ZnO coaxial nanorod arrays grown on a p-GaN substrate. The LEDs demonstrated strong near ultraviolet emission at room temperature. The nanorod LEDs were turned on a forward-bias voltage of 5 V, and exhibited a large light emitting area. From electroluminescent spectra, dominant emission peaks were observed at 2.96 and 3.24 eV for an applied current of 2 mA. The origins of the strong and large area light emission are also discussed in terms of enhanced carrier injection from n-GaN nanostructures to p-GaN substrates. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Near ultraviolet light emitting diode composed of n-GaN/ZnO coaxial nanorod heterostructures on a p-GaN layer | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.2786852 | - |
dc.author.google | An, Sung Jin | en_US |
dc.author.google | Yi, Gyu-Chul | en_US |
dc.relation.volume | 91 | en_US |
dc.relation.issue | 12 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.91, no.12 | - |
dc.identifier.wosid | 000249667200097 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 12 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 91 | - |
dc.contributor.affiliatedAuthor | Yi, GC | - |
dc.identifier.scopusid | 2-s2.0-34648812740 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 41 | - |
dc.description.scptc | 48 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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